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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263ODMR Studies of AS-Grown and Electron-Irradiated...

ODMR Studies of AS-Grown and Electron-Irradiated GaN and AlN

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

1087-1092

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.1087

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Online since:

December 1997

Authors:

G.D. Watkins, Matthias Linde, P.W. Mason, Hanka Przybylinska, C. Bozdog, S.J. Uftring, V. Härle, F. Scholz, Wolfgang J. Choyke, G.A. Slack

Keywords:

Aluminum Nitride (AlN), Electron Irradiation, Gallium Nitride (GaN), PL-ODMR

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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