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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263

Materials Science Forum Vols. 258-263

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263

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Table of Contents

Paper Title Page

Long-Range Lattice Relaxation for Donor Centers in Supercell Method

Authors: S. Bednarek, J. Adamowski

1287

Decay Kinetics of Growth-Induced Alignment of the First Neighbor Shell of C_As in Al_xGa_1-xAs

Authors: J. Anna Zhou, C.Y. Song, J.-F. Zheng, Michael Stavola, B.V. Cockeram, Stephen J. Pearton

1293

Plausible Evidence of Existence of Deep Acceptors in Si δ-Doped AlGaAs

Authors: K. Takarabe, N. Okada, K. Ohmura, Hiroshi Ohkura

1299

Magneto-Optical and Magnetic Resonance Investigations of Intrinsic Defects in Electron-Irradiated n-Type Al_xGa_1-xAs

Authors: K.H. Wietzke, M.V.B. Pinheiro, F.K. Koschnick, K. Krambrock, Johann Martin Spaeth

1303

Gallium Interstitials in GaAs/AlGaAs Heterostructures Investigated by Optically and Electrically Detected Magnetic Resonance

Authors: T. Wimbauer, M.S. Brandt, M.W. Bayerl, M. Stutzmann, D.M. Hofmann, Yasunori Mochizuki, M. Mizuta

1309

ODMR Investigations of Ge Acceptors in p-Type Al_0.4Ga_0.6As

Authors: M.V.B. Pinheiro, K. Krambrock, A.S. Chaves, K.H. Wietzke, F.K. Koschnick, Johann Martin Spaeth

1315

Inverted Charge States of Anion and Cation-Site Vacancies in Zinc Blende Semiconductors:Theory

Authors: D.J. Chadi

1321

Degradation in II-VI Laser Diodes

Authors: Kazushi Nakano, Akira Ishibashi

1329

Defect Characterization of II-VI Compound Semiconductors Using Positron Lifetime Spectroscopy

Authors: G. Tessaro, Peter Mascher

1335

Defect Structures in Heavily In-Doped II-VI Semiconductors

Authors: V. Ostheimer, T. Filz, Joe Hamann, St. Lauer, D. Weber, Herbert Wolf, Th. Wichert

1341