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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263

Materials Science Forum Vols. 258-263

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263

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Table of Contents

Paper Title Page

GaN Doped with Sulfur

Authors: Adam W. Saxler, P. Kung, Xue Ren Zhang, D. Walker, J. Solomon, M. Ahoujja, W.C. Mitchel, H.R. Vydyanath, M. Razeghi

1161

Identification of Iron Transition Group Trace Impurities in GaN Bulk Crystals by Electron Paramagnetic Resonance

Authors: P.G. Baranov, Ivan V. Ilyin, E.N. Mokhov

1167

Local Vibrational Modes at Transition-Metal Impurities in Hexagonal AlN and GaN Crystals

Authors: C. Göbel, Christoph Schrepel, Udo Scherz, P. Thurian, G. Kaczmarczyk, Andreas Hoffmann

1173

Local Vibrational Modes at As_N in Cubic GaN: Comparing Ab-Initio Calculations to a Semi-Empirical Model

Authors: K. Petzke, C. Göbel, Christoph Schrepel, P. Thurian, Udo Scherz

1179

A Codoping Method in GaN Proposed by Ab Initio Electronic-Structure Calculations

Authors: T. Yamamoto, Hiroshi Katayama-Yoshida

1185

Photoluminescence of Donor Acceptor Pair Transitions in Hexagonal and Cubic MBE-Grown GaN

Authors: Joachim Krüger, Dorina Corlatan, Christian Kisielowski-Kemmerich, Yihwan Kim, Ralf Klockenbrink, G.S. Sudhir, Michael Rubin, Eicke R. Weber

1191

Raman Scattering from Defects in GaN

Authors: H. Siegle, A. Kaschner, P. Thurian, Andreas Hoffmann, I. Broser, C. Thomsen

1197

Structural and Electrical Properties of Threading Dislocations in GaN

Authors: J. Elsner, R. Jones, P.K. Sitch, Thomas Frauenheim, M.I. Heggie, Sven Öberg, Patrick R. Briddon

1203

Defects Analysis in Strained InAlAs and InGaAs Films Grown on (111)B InP Substrates

Authors: N. Bécourt, J.C. Ferrer, F. Peiró, A. Cornet, J.R. Morante, P. Gorostiza, G. Halkias, K. Michelakis, A. Georgakilas

1211

Irradiation Induced Lattice Defects in In_0.53Ga_0.47As Pin Photodiodes

Authors: T. Kudou, H. Ohyama, Jan Vanhellemont, Eddy Simoen, Cor Claeys, Y. Takami, Akihiro Fujii, H. Sunaga

1217