Paper Titles

Study of Nitrogen Incorporation in 6H-SiC Single Crystals Grown by PVT
p.87

Evaporation Behavior of SiC Powder for Single Crystal Growth-An Experimental Study on Thermodynamics and Kinetics
p.91

Considerations on the Crystal Morphology in the Sublimation Growth of SiC
p.95

Shape of SiC Bulk Single Crystal Grown by Sublimation
p.99

Enlargement of SiC Single Crystal: Enhancement of Lateral Growth using Tapered Graphite Lid
p.103

Top-seeded Solution Growth of Bulk SiC: Search for Fast Growth Regimes
p.107

Controlled Growth of Bulk 15R-SiC Single Crystals by the Modified Lely Method
p.111

Crystal Growth of 15R-SiC Boules by Sublimation Method
p.115

Growth of 3C SiC Single Crystals from Convection Dominated Melts
p.119

HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Enlargement of SiC Single Crystal: Enhancement of...

Enlargement of SiC Single Crystal: Enhancement of Lateral Growth using Tapered Graphite Lid

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials - 1999

Info:

Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

103-106

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.103

Citation:

Cite this paper

Online since:

May 2000

Authors:

Wook Bahng, Yasuo Kitou, Shin Ichi Nishizawa, Hirotaka Yamaguchi, Muhammad Nasir Khan, Naoki Oyanagi, Kazuo Arai, Shigehiro Nishino

Keywords:

Cone-Shaped Platform, Lateral Growth, Polycrystals, PVT Growth, Rapid Enlargement, Single Crystal, Taper Angle

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2000 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: