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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Study of Nitrogen Incorporation in 6H-SiC Single...

Study of Nitrogen Incorporation in 6H-SiC Single Crystals Grown by PVT

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

87-90

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.87

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Online since:

May 2000

Authors:

D. Schulz, K. Irmscher, J. Dolle, W. Eiserbeck, Timo Müller, H. J. Rost, D. Siche, Günter Wagner, Jürgen Wollweber

Keywords:

6H Polytype, Nitrogen Concentration, Seed Orientation, Sublimation Bulk Growth

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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