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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342SiC Single Crystal Growth Rate Measurement by...

SiC Single Crystal Growth Rate Measurement by In-Situ Observation using the Transmission X-Ray Technique

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

75-78

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.75

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Online since:

May 2000

Authors:

Naoki Oyanagi, Shin Ichi Nishizawa, Tomohisa Kato, Hirotaka Yamaguchi, Kazuo Arai

Keywords:

Growth Rate, In Situ Observation, Sublimation Growth, Transmission X-Ray Technique

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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