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Paper Titles
SiC Single Crystal Growth Rate Measurement by In-Situ Observation using the Transmission X-Ray Technique
p.75
Role of Temperature Gradient in Bulk Crystal Growth of SiC
p.79
Pressure Effect in Sublimation Growth of Bulk SiC
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Study of Nitrogen Incorporation in 6H-SiC Single Crystals Grown by PVT
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Evaporation Behavior of SiC Powder for Single Crystal Growth-An Experimental Study on Thermodynamics and Kinetics
p.91
Considerations on the Crystal Morphology in the Sublimation Growth of SiC
p.95
Shape of SiC Bulk Single Crystal Grown by Sublimation
p.99
Enlargement of SiC Single Crystal: Enhancement of Lateral Growth using Tapered Graphite Lid
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Top-seeded Solution Growth of Bulk SiC: Search for Fast Growth Regimes
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Evaporation Behavior of SiC Powder for Single Crystal Growth-An Experimental Study on Thermodynamics and Kinetics

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

91-94

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.91

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Online since:

May 2000

Authors:

Alexander Pisch, Ana Maria Ferraria, Christian Chatillon, Elisabeth Blanquet, Michel Pons, Claude Bernard, Mikhail Anikin, Roland Madar

Keywords:

Evaporation Coefficient, High Temperature Mass Spectrometry, Vaporization

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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