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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Pressure Effect in Sublimation Growth of Bulk SiC

Pressure Effect in Sublimation Growth of Bulk SiC

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

83-86

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.83

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Online since:

May 2000

Authors:

Yasuo Kitou, Wook Bahng, Shin Ichi Nishizawa, Shigehiro Nishino, Kazuo Arai

Keywords:

Aluminum (Al), C/Si Ratio, Crystal Defect, Growth Pressure, Growth Rate, Impurity Incorporation, SIMS, Sublimation Growth

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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