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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Role of Temperature Gradient in Bulk Crystal...

Role of Temperature Gradient in Bulk Crystal Growth of SiC

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

79-82

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.79

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Online since:

May 2000

Authors:

Cengiz M. Balkas, Andrei A. Maltsev, Matthew D. Roth, Nikolay K. Yushin

Keywords:

Activation Energy, Bulk Growth, Enlargement, Growth Rate, Mass Transport, Sublimation, Temperature Distribution, X-Ray

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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