Role of Temperature Gradient in Bulk Crystal Growth of SiC

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Periodical:

Materials Science Forum (Volumes 338-342)

Edited by:

Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer

Pages:

79-82

DOI:

10.4028/www.scientific.net/MSF.338-342.79

Citation:

C. M. Balkas et al., "Role of Temperature Gradient in Bulk Crystal Growth of SiC", Materials Science Forum, Vols. 338-342, pp. 79-82, 2000

Online since:

May 2000

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$38.00

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