Nucleation of Dislocations during Physical Vapor Transport Growth of Silicon Carbide

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 338-342)

Edited by:

Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer

Pages:

63-66

DOI:

10.4028/www.scientific.net/MSF.338-342.63

Citation:

E. M. Sanchez et al., "Nucleation of Dislocations during Physical Vapor Transport Growth of Silicon Carbide", Materials Science Forum, Vols. 338-342, pp. 63-66, 2000

Online since:

May 2000

Export:

Price:

$35.00

In order to see related information, you need to Login.