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Paper Titles
Evaporation Behavior of SiC Powder for Single Crystal Growth-An Experimental Study on Thermodynamics and Kinetics
p.91
Considerations on the Crystal Morphology in the Sublimation Growth of SiC
p.95
Shape of SiC Bulk Single Crystal Grown by Sublimation
p.99
Enlargement of SiC Single Crystal: Enhancement of Lateral Growth using Tapered Graphite Lid
p.103
Top-seeded Solution Growth of Bulk SiC: Search for Fast Growth Regimes
p.107
Controlled Growth of Bulk 15R-SiC Single Crystals by the Modified Lely Method
p.111
Crystal Growth of 15R-SiC Boules by Sublimation Method
p.115
Growth of 3C SiC Single Crystals from Convection Dominated Melts
p.119
An Overview of SiC Growth
p.125

Top-seeded Solution Growth of Bulk SiC: Search for Fast Growth Regimes

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Silicon Carbide and Related Materials - 1999 View Preview

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

107-110

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.107

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Online since:

May 2000

Authors:

Boris M. Epelbaum, Dieter Hofmann, M. Müller, Albrecht Winnacker

Keywords:

Bulk Crystals, Silicon Carbide (SiC), Solution Growth, Top-seeded Growth Method

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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