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Crystal Growth of 15R-SiC Boules by Sublimation Method
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An Overview of SiC Growth
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Morphology Control for Growth of Thick Epitaxial 4H SiC Layers
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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342An Overview of SiC Growth

An Overview of SiC Growth

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

125-130

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.125

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Online since:

May 2000

Authors:

Hiroyuki Matsunami

Keywords:

Bulk Growth, Doping, Epitaxial Growth, Heteroepitaxy, Homoepitaxy, Step Bunching, Step-Controlled Epitaxy

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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