Crystal Growth of 15R-SiC Boules by Sublimation Method
p.115
p.115
Growth of 3C SiC Single Crystals from Convection Dominated Melts
p.119
p.119
An Overview of SiC Growth
p.125
p.125
Fast SiC Epitaxial Growth in a Chimney CVD Reactor and HTCVD Crystal Growth Developments
p.131
p.131
Morphology Control for Growth of Thick Epitaxial 4H SiC Layers
p.137
p.137
Vertical Hot-Wall Type CVD for SiC Growth
p.141
p.141
LPCVD Growth and Structural Properties of 4H-SiC Epitaxial Layers
p.145
p.145
3-D Computational Modeling of SiC Epitaxial Growth in a Hot Wall Reactor
p.149
p.149
3-D Thermal and Flow Modeling of Hot Wall Epitaxial Chemical Vapor Deposition Reactors, Heated by Induction
p.153
p.153
Morphology Control for Growth of Thick Epitaxial 4H SiC Layers
Abstract:
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Periodical:
Materials Science Forum (Volumes 338-342)
Pages:
137-140
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Online since:
May 2000
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© 2000 Trans Tech Publications Ltd. All Rights Reserved
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