Fast SiC Epitaxial Growth in a Chimney CVD Reactor and HTCVD Crystal Growth Developments
p.131
p.131
Morphology Control for Growth of Thick Epitaxial 4H SiC Layers
p.137
p.137
Vertical Hot-Wall Type CVD for SiC Growth
p.141
p.141
LPCVD Growth and Structural Properties of 4H-SiC Epitaxial Layers
p.145
p.145
3-D Computational Modeling of SiC Epitaxial Growth in a Hot Wall Reactor
p.149
p.149
3-D Thermal and Flow Modeling of Hot Wall Epitaxial Chemical Vapor Deposition Reactors, Heated by Induction
p.153
p.153
The Development of Resistive Heating for the High Temperature Growth of α-SiC using a Vertical CVD Reactor
p.157
p.157
Initial Results on Thick 4H-SiC Epitaxial Layers Grown Using Vapor Phase Epitaxy
p.161
p.161
High Growth Rate Epitaxy of Thick 4H-SiC Layers
p.165
p.165
3-D Computational Modeling of SiC Epitaxial Growth in a Hot Wall Reactor
Abstract:
You might also be interested in these eBooks
Info:
Periodical:
Materials Science Forum (Volumes 338-342)
Pages:
149-152
Citation:
Online since:
May 2000
Authors:
Price:
Сopyright:
© 2000 Trans Tech Publications Ltd. All Rights Reserved
Share:
Citation: