LPCVD Growth and Structural Properties of 4H-SiC Epitaxial Layers
p.145
p.145
3-D Computational Modeling of SiC Epitaxial Growth in a Hot Wall Reactor
p.149
p.149
3-D Thermal and Flow Modeling of Hot Wall Epitaxial Chemical Vapor Deposition Reactors, Heated by Induction
p.153
p.153
The Development of Resistive Heating for the High Temperature Growth of α-SiC using a Vertical CVD Reactor
p.157
p.157
Initial Results on Thick 4H-SiC Epitaxial Layers Grown Using Vapor Phase Epitaxy
p.161
p.161
High Growth Rate Epitaxy of Thick 4H-SiC Layers
p.165
p.165
Competitive Growth between Deposition and Etching in 4H-SiC CVD Epitaxy Using Quasi-Hot Wall Reactor
p.169
p.169
Multi-Wafer VPE Growth and Characterization of SiC Epitaxial Layers
p.173
p.173
Homoepitaxy of Silicon Carbide Using the Single Precursor 1,3-Disilabutane
p.177
p.177
Initial Results on Thick 4H-SiC Epitaxial Layers Grown Using Vapor Phase Epitaxy
Abstract:
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Periodical:
Materials Science Forum (Volumes 338-342)
Pages:
161-164
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Online since:
May 2000
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© 2000 Trans Tech Publications Ltd. All Rights Reserved
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