Initial Results on Thick 4H-SiC Epitaxial Layers Grown Using Vapor Phase Epitaxy

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Periodical:

Materials Science Forum (Volumes 338-342)

Edited by:

Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer

Pages:

161-164

DOI:

10.4028/www.scientific.net/MSF.338-342.161

Citation:

L.B. Rowland et al., "Initial Results on Thick 4H-SiC Epitaxial Layers Grown Using Vapor Phase Epitaxy", Materials Science Forum, Vols. 338-342, pp. 161-164, 2000

Online since:

May 2000

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$35.00

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