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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Homoepitaxy of Silicon Carbide Using the Single...

Homoepitaxy of Silicon Carbide Using the Single Precursor 1,3-Disilabutane

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

177-180

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.177

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Online since:

May 2000

Authors:

Sung Yong Lee, Kyung Won Lee, Yunsoo Kim

Keywords:

Chemical Vapor Deposition (CVD), Homoepitaxy, Single Precursors

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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