4H-SiC Substrate Orientation Effects on Hydrogen Etching and Epitaxial Growth

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Periodical:

Materials Science Forum (Volumes 338-342)

Edited by:

Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer

Pages:

185-188

DOI:

10.4028/www.scientific.net/MSF.338-342.185

Citation:

B.E. Landini and G. R. Brandes, "4H-SiC Substrate Orientation Effects on Hydrogen Etching and Epitaxial Growth", Materials Science Forum, Vols. 338-342, pp. 185-188, 2000

Online since:

May 2000

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$35.00

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