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4H-SiC (11-20) Epitaxial Growth
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Homoepitaxial Growth of 6H SiC on Single Crystalline Spheres
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Morphological Stability of 6H-SiC Epitaxial Layer on Hemispherical Substrates Prepared by Chemical Vapor Deposition
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Growth of SiC on 6H-SiC {01-14} Substrates by Gas Source Molecular Beam Epitaxy
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Molecular Beam Epitaxial Growth of Heteropolytypic and Low-Dimensional Structures of SiC
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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Morphological Stability of 6H-SiC Epitaxial Layer...

Morphological Stability of 6H-SiC Epitaxial Layer on Hemispherical Substrates Prepared by Chemical Vapor Deposition

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

197-200

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.197

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Online since:

May 2000

Authors:

Shigehiro Nishino, Y. Nishio, Yasuichi Masuda, Yi Chen, Chacko Jacob

Keywords:

6H-SiC, Chemical Vapor Deposition (CVD), Homoepitaxial Growth, Morpholoy

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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