Morphological Stability of 6H-SiC Epitaxial Layer on Hemispherical Substrates Prepared by Chemical Vapor Deposition

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Periodical:

Materials Science Forum (Volumes 338-342)

Edited by:

Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer

Pages:

197-200

DOI:

10.4028/www.scientific.net/MSF.338-342.197

Citation:

S. Nishino et al., "Morphological Stability of 6H-SiC Epitaxial Layer on Hemispherical Substrates Prepared by Chemical Vapor Deposition", Materials Science Forum, Vols. 338-342, pp. 197-200, 2000

Online since:

May 2000

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