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Morphological Stability of 6H-SiC Epitaxial Layer on Hemispherical Substrates Prepared by Chemical Vapor Deposition
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Growth of SiC on 6H-SiC {01-14} Substrates by Gas Source Molecular Beam Epitaxy
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Molecular Beam Epitaxial Growth of Heteropolytypic and Low-Dimensional Structures of SiC
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Thermodynamical Consideration of the Epitaxial Growth of SiC Polytypes
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Mechanisms of SiC(111) Step Flow Growth
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Mechanism of Various Defects Formation in Epitaxial Layer Prepared by Sublimation Epitaxy
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Investigation of 3C-SiC Epitaxial Layers Grown by Sublimation Epitaxy
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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Thermodynamical Consideration of the Epitaxial...

Thermodynamical Consideration of the Epitaxial Growth of SiC Polytypes

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

209-212

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.209

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Online since:

May 2000

Authors:

Andreas Fissel

Keywords:

Growth Conditions, MBE, Nucleation, Polytype, Polytypism, Sublimation, Thermodynamic

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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