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Mechanisms of SiC(111) Step Flow Growth
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Mechanism of Various Defects Formation in Epitaxial Layer Prepared by Sublimation Epitaxy
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Investigation of 3C-SiC Epitaxial Layers Grown by Sublimation Epitaxy
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Growth of SiC and GaN on Porous Buffer Layers
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4H-SiC Layers Grown by Liquid Phase Epitaxy on 4H-SiC Off-Axis Substrates
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Temperature Gradient Effect on SiC Epitaxy in Liquid Phase
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Micropipe Healing in Liquid Phase Epitaxial Growth of SiC
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Growth of CVD Thin Films and Thick LPE 3C SiC in a Specially Designed Reactor
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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Growth of SiC and GaN on Porous Buffer Layers

Growth of SiC and GaN on Porous Buffer Layers

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

225-228

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.225

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Online since:

May 2000

Authors:

Marina G. Mynbaeva, N.S. Savkina, Alla S. Tregubova, M.P. Scheglov, Alexander A. Lebedev, A.S. Zubrilov, A. Titkov, A. Kryganovski, K. Mynbaev, Natasha V. Seredova, D. Tsvetkov, S. Stepanov, A.E. Cherenkov, I. Kotousova, Vladimir Dmitriev

Keywords:

Defect Density, Epitaxial Growth, Porous Substrate, Stress Reduction

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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