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HomeMaterials Science ForumMaterials Science Forum Vols. 338-3424H-SiC Layers Grown by Liquid Phase Epitaxy on...

4H-SiC Layers Grown by Liquid Phase Epitaxy on 4H-SiC Off-Axis Substrates

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

229-232

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.229

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Online since:

May 2000

Authors:

N.I. Kuznetsov, A. Morozov, D. Bauman, V. Ivantsov, V. Sukhoveyev, Irina P. Nikitina, A.S. Zubrilov, S.V. Rendakova, Vladimir Dmitriev, D. Hofman, György Vida

Keywords:

Background Doping Concentration, Electric Carrier Diffusion Length, Liquid Phase Epitaxy (LPE)

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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