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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Lateral Epitaxial Overgrowth and Pendeo Epitaxy of...

Lateral Epitaxial Overgrowth and Pendeo Epitaxy of 3C-SiC on Si Substrates

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

245-248

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.245

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Online since:

May 2000

Authors:

Stephen E. Saddow, G.E. Carter, Bruce Geil, T.S. Zheleva, Galyna Melnychuck, M.E. Okhuysen, Michael S. Mazzola, R.D. Vispute, Michael A. Derenge, Matthew H. Ervin, Kenneth A. Jones

Keywords:

3C-SiC, Heteroepitaxy, LEO, Pendeo, TEM

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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