Lateral Epitaxial Overgrowth and Pendeo Epitaxy of 3C-SiC on Si Substrates

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 338-342)

Edited by:

Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer

Pages:

245-248

DOI:

10.4028/www.scientific.net/MSF.338-342.245

Citation:

S. E. Saddow et al., "Lateral Epitaxial Overgrowth and Pendeo Epitaxy of 3C-SiC on Si Substrates", Materials Science Forum, Vols. 338-342, pp. 245-248, 2000

Online since:

May 2000

Export:

Price:

$35.00

In order to see related information, you need to Login.