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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Selective Epitaxial Growth of Silicon Carbide on...

Selective Epitaxial Growth of Silicon Carbide on Patterned Silicon Substrates Using Hexachlorodisilane and Propane

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

249-252

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.249

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Online since:

May 2000

Authors:

Chacko Jacob, Moon Hi Hong, Juyong Chung, P. Pirouz, Shigehiro Nishino

Keywords:

HCDS, Lateral Overgrowth, Low Temperature Epitaxy, Selective Epitaxy, TEM, TMA

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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