For Libraries For Publication Open Access Downloads About Us Contact Us
Paper Titles
Selective Epitaxial Growth of Silicon Carbide on Patterned Silicon Substrates Using Hexachlorodisilane and Propane
p.249
The APD Annihilation Mechanism of 3C-SiC Hetero-Epilayer on Si(001) Substrate
p.253
Improvement of 3C-SiC Surface Morphology on Si(100) by Adding HCl using Atmospheric CVD
p.257
Carbonization on (100) Silicon for Heteroepitaxial Growth of 3C-SiC
p.261
Growth of 3C-SiC/Si Multilayer Heterostructures by Supersonic Free Jets
p.265
Formation of High Quality SiC on Si(100) at 900°C using Monomethylsilane Gas-Source MBE
p.269
Growth and Characterization of N-Doped SiC Films from Trimethylsilane
p.273
The Effect of Ge on the Structure & Morphology of SiC Films Grown on (111) Si Substrates
p.277
In Situ Monitoring of the Effect of Ge on the SiC Growth on (111)Si Surfaces
p.281

Growth of 3C-SiC/Si Multilayer Heterostructures by Supersonic Free Jets

Article Preview

Abstract:

You might also be interested in these eBooks
Silicon Carbide and Related Materials - 1999 View Preview

Info:

Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

265-268

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.265

Citation:

Cite this paper

Online since:

May 2000

Authors:

Yoshifumi Ikoma, Takeshi Endo, T. Tada, Fumio Watanabe, Teruaki Motooka

Keywords:

3C-SiC/Si/3C-SiC/Si(100), CH3SiH3, Si/3C-SiC/Si(100), Si3H8, Supersonic Free Jet CVD

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2000 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

References

This article has no references.

© 2025 Trans Tech Publications Ltd. All rights are reserved, including those for text and data mining, AI training, and similar technologies. For open access content, terms of the Creative Commons licensing CC-BY are applied.
Scientific.Net is a registered trademark of Trans Tech Publications Ltd.