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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342The APD Annihilation Mechanism of 3C-SiC...

The APD Annihilation Mechanism of 3C-SiC Hetero-Epilayer on Si(001) Substrate

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

253-256

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.253

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Online since:

May 2000

Authors:

Yuuki Ishida, Tetsuo Takahashi, Hajime Okumura, Toshihiro Sekigawa, Sadafumi Yoshida

Keywords:

3C-SiC, APCVD, APDs Annihilation Mechanism, Growth Mode, LPCVD, Simulation

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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