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Carbonization on (100) Silicon for Heteroepitaxial Growth of 3C-SiC
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Growth of 3C-SiC/Si Multilayer Heterostructures by Supersonic Free Jets
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Formation of High Quality SiC on Si(100) at 900°C using Monomethylsilane Gas-Source MBE
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Growth and Characterization of N-Doped SiC Films from Trimethylsilane
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The Effect of Ge on the Structure & Morphology of SiC Films Grown on (111) Si Substrates
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In Situ Monitoring of the Effect of Ge on the SiC Growth on (111)Si Surfaces
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Structural Investigations of the Nucleation and Growth of SiC during Rapid Thermal Conversion of (111)Si
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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Formation of High Quality SiC on Si(100) at 900°C...

Formation of High Quality SiC on Si(100) at 900°C using Monomethylsilane Gas-Source MBE

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

269-272

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.269

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Online since:

May 2000

Authors:

Hideki Nakazawa, M. Suemitsu, S. Asami

Keywords:

Gas Source Molecular Beam Epitaxy, Monomethylsilane, Si Outdiffusion, Surface Hydrogen

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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