Formation of High Quality SiC on Si(100) at 900°C using Monomethylsilane Gas-Source MBE

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Periodical:

Materials Science Forum (Volumes 338-342)

Edited by:

Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer

Pages:

269-272

DOI:

10.4028/www.scientific.net/MSF.338-342.269

Citation:

H. Nakazawa et al., "Formation of High Quality SiC on Si(100) at 900°C using Monomethylsilane Gas-Source MBE", Materials Science Forum, Vols. 338-342, pp. 269-272, 2000

Online since:

May 2000

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$35.00

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