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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342In Situ Monitoring of the Effect of Ge on the SiC...

In Situ Monitoring of the Effect of Ge on the SiC Growth on (111)Si Surfaces

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

281-284

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.281

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Online since:

May 2000

Authors:

T. Wöhner, Thomas Stauden, J.A. Schaefer, Joerg Pezoldt

Keywords:

Carbonization, Germanium, Heteroepitaxy, In Situ Monitoring, SiC Growth, Spectroscopic Ellipsometry (SE)

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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