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The Effect of Ge on the Structure & Morphology of SiC Films Grown on (111) Si Substrates
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In Situ Monitoring of the Effect of Ge on the SiC Growth on (111)Si Surfaces
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Structural Investigations of the Nucleation and Growth of SiC during Rapid Thermal Conversion of (111)Si
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The Influence of Foreign Atoms on the early Stages of SiC Growth on (111)Si
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Studies of the Initial Stages of Silicon Carbide Growth using Molecular Hydrocarbon and Methyl Radical Gas Species
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Carbonization of SIMOX Substrates for Fabrication of Single-crystal SiC-on-insulator
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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342The Influence of Foreign Atoms on the early Stages...

The Influence of Foreign Atoms on the early Stages of SiC Growth on (111)Si

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

289-292

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.289

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Online since:

May 2000

Authors:

Joerg Pezoldt, György Vida, M. Rouhani Laridjani, M. Averous, T. Wöhner, J.A. Schaefer, Thomas Stauden, Gernot Ecke, R. Pieterwas, Lothar Spieß

Keywords:

Germanium, Heteroepitaxy, Heterointerface Control, Molecular Beam Epitaxy (MBE)

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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