The Influence of Foreign Atoms on the early Stages of SiC Growth on (111)Si

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Periodical:

Materials Science Forum (Volumes 338-342)

Edited by:

Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer

Pages:

289-292

DOI:

10.4028/www.scientific.net/MSF.338-342.289

Citation:

J. Pezoldt et al., "The Influence of Foreign Atoms on the early Stages of SiC Growth on (111)Si", Materials Science Forum, Vols. 338-342, pp. 289-292, 2000

Online since:

May 2000

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$35.00

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