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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Low Temperature Growth of 3C-SiC on Silicon for...

Low Temperature Growth of 3C-SiC on Silicon for Advanced Substrate Development

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

305-308

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.305

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Online since:

May 2000

Authors:

M.E. Okhuysen, Michael S. Mazzola, Y.-H. Lo

Keywords:

Antiphase Domain, Cu-Nb, SOI, Twin, Universal Compliant

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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