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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Growth of Single Crystalline 3C-SiC and AIN on Si...

Growth of Single Crystalline 3C-SiC and AIN on Si using Porous Si as a Compliant Seed Crystal

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

313-316

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.313

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Online since:

May 2000

Authors:

D. Purser, M. Jenkins, D. Lieu, F. Vaccaro, A. Faik, M.A. Hasan, H.J. Leamy, C. Carlin, Mauro R. Sardela, Qing Xiang Zhao, Magnus Willander, M. Karlsteen

Keywords:

Aluminum Nitride (AlN), Compliant Substrate, Cubic Silicon Carbide (3C-SiC), Gas- Source MBE, Heterojunction Diode, Low-Pressure CVD, MBE, Porous Si, RF Atomic Source, Trimethylsilane (TMS)

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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