Paper Titles

Growth of Single Crystalline 3C-SiC and AIN on Si using Porous Si as a Compliant Seed Crystal
p.313

The Growth and Characterization of 3C-SiC/SiNx/Si Structure
p.317

The Diffusion Coefficient of Silicon in Thin SiC Layers as a Criterion for the Quality of the Grown Layers
p.321

Plasma Enhanced Chemical Vapor Deposition and Characterization of Hydrogenated Amorphous SiC Films on Si
p.325

Thin Films of α-Si_1-xC_x:H Deposited by PECVD: The r.f. Power and H₂ Dilution Role
p.329

Surface Composition of 4H-SiC as a Function of Temperature
p.335

Stacking Rearrangement on SiC Surfaces: A Possible Seed for Polytype Heterostructure Growth
p.341

Atomic Structure of 6H-SiC(000-1)-(2x2)_c
p.345

Ab Initio Calculation on Clean and Oxygen Covered 6H-SiC(0001) Surfaces: (√ 3x√ 3)R30° Reconstruction
p.349

HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Thin Films of α-Si1-xCx:H Deposited by PECVD: The...

Thin Films of α-Si_1-xC_x:H Deposited by PECVD: The r.f. Power and H₂ Dilution Role

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials - 1999

Info:

Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

329-334

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.329

Citation:

Cite this paper

Online since:

May 2000

Authors:

R.J. Prado, M.C.A. Fantini, M.H. Tabacniks, I. Pereyra, A.M. Flank

Keywords:

Amorphous Silicon Carbide, Silane Starving Plasma Regime

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2000 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: