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Surface Composition of 4H-SiC as a Function of Temperature
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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Stacking Rearrangement on SiC Surfaces: A Possible...

Stacking Rearrangement on SiC Surfaces: A Possible Seed for Polytype Heterostructure Growth

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

341-344

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.341

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Online since:

May 2000

Authors:

Ulrich Starke, J. Bernhardt, J. Schardt, A. Seubert, K. Heinz

Keywords:

4H-SiC, 6H-SiC, Heterostructures, Hexagonal Surfaces, Low-Energy Electron Diffraction, Polytype, Reconstruction, Scanning Tunneling Microscopy, Stacking Sequence, Surface Structure

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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