Stacking Rearrangement on SiC Surfaces: A Possible Seed for Polytype Heterostructure Growth

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Periodical:

Materials Science Forum (Volumes 338-342)

Edited by:

Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer

Pages:

341-344

DOI:

10.4028/www.scientific.net/MSF.338-342.341

Citation:

U. Starke et al., "Stacking Rearrangement on SiC Surfaces: A Possible Seed for Polytype Heterostructure Growth", Materials Science Forum, Vols. 338-342, pp. 341-344, 2000

Online since:

May 2000

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$35.00

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