Thin Films of α-Si1-xCx:H Deposited by PECVD: The r.f. Power and H2 Dilution Role
p.329
p.329
Surface Composition of 4H-SiC as a Function of Temperature
p.335
p.335
Stacking Rearrangement on SiC Surfaces: A Possible Seed for Polytype Heterostructure Growth
p.341
p.341
Atomic Structure of 6H-SiC(000-1)-(2x2)c
p.345
p.345
Ab Initio Calculation on Clean and Oxygen Covered 6H-SiC(0001) Surfaces: (√ 3x√ 3)R30° Reconstruction
p.349
p.349
Photo-Emission Electron Microscopy (PEEM) of Cleaned and Etched 6H-SiC(0001)
p.353
p.353
High Resolution Electron Energy Loss Spectroscopy of √ 3x√ 3 6H-SiC(0001)
p.357
p.357
In-Situ RHEED Analysis During α-SiC Homoepitaxy on (0001)Si- and (000-1)C-Faces by Gas Source Molecular Beam Epitaxy
p.361
p.361
(10-10)– and (11-20)–Surfaces in 2H–, 4H– and 6H–SiC
p.365
p.365
Ab Initio Calculation on Clean and Oxygen Covered 6H-SiC(0001) Surfaces: (√ 3x√ 3)R30° Reconstruction
Abstract:
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Periodical:
Materials Science Forum (Volumes 338-342)
Pages:
349-352
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Online since:
May 2000
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© 2000 Trans Tech Publications Ltd. All Rights Reserved
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