Paper Titles

Atomic Structure of 6H-SiC(000-1)-(2x2)_c
p.345

Ab Initio Calculation on Clean and Oxygen Covered 6H-SiC(0001) Surfaces: (√ 3x√ 3)R30° Reconstruction
p.349

Photo-Emission Electron Microscopy (PEEM) of Cleaned and Etched 6H-SiC(0001)
p.353

High Resolution Electron Energy Loss Spectroscopy of √ 3x√ 3 6H-SiC(0001)
p.357

In-Situ RHEED Analysis During α-SiC Homoepitaxy on (0001)Si- and (000-1)C-Faces by Gas Source Molecular Beam Epitaxy
p.361

(10-10)– and (11-20)–Surfaces in 2H–, 4H– and 6H–SiC
p.365

Theory of Structural and Electronic Properties of Cubic SiC Surfaces
p.369

Characterization of Anisotropic Step-bunching on as-grown SiC Surfaces
p.375

Observation of Macrostep Formation on the (0001) Facet of Bulk SiC Crystals
p.379

HomeMaterials Science ForumMaterials Science Forum Vols. 338-342In-Situ RHEED Analysis During α-SiC Homoepitaxy on...

In-Situ RHEED Analysis During α-SiC Homoepitaxy on (0001)Si- and (000-1)C-Faces by Gas Source Molecular Beam Epitaxy

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

361-364

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.361

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Online since:

May 2000

Authors:

Tomoaki Hatayama, Takashi Fuyuki, Shun-ichi Nakamura, K. Kurobe, Tsunenobu Kimoto, Hiroyuki Matsunami

Keywords:

Gas Source Molecular Beam Epitaxy, RHEED, Surface Structure

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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