In-Situ RHEED Analysis During α-SiC Homoepitaxy on (0001)Si- and (000-1)C-Faces by Gas Source Molecular Beam Epitaxy

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Periodical:

Materials Science Forum (Volumes 338-342)

Edited by:

Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer

Pages:

361-364

DOI:

10.4028/www.scientific.net/MSF.338-342.361

Citation:

T. Hatayama et al., "In-Situ RHEED Analysis During α-SiC Homoepitaxy on (0001)Si- and (000-1)C-Faces by Gas Source Molecular Beam Epitaxy", Materials Science Forum, Vols. 338-342, pp. 361-364, 2000

Online since:

May 2000

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$35.00

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