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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342The Diffusion Coefficient of Silicon in Thin SiC...

The Diffusion Coefficient of Silicon in Thin SiC Layers as a Criterion for the Quality of the Grown Layers

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

321-324

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.321

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Online since:

May 2000

Authors:

Volker Cimalla, T. Wöhner, Joerg Pezoldt

Keywords:

Carbonization, Diffusion Coefficient, Growth Model, Layer Growth Kinetics

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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