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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Growth and Characterization of N-Doped SiC Films...

Growth and Characterization of N-Doped SiC Films from Trimethylsilane

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

273-276

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.273

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Online since:

May 2000

Authors:

Jin Ming Chen, A.J. Steckl, Mark J. Loboda

Keywords:

Chemical Vapor Deposition (CVD), Hall-Effect Measurement, N₂ doping, Trimethylsilane (TMS)

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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