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Mechanisms of SiC(111) Step Flow Growth
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Mechanism of Various Defects Formation in Epitaxial Layer Prepared by Sublimation Epitaxy
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Investigation of 3C-SiC Epitaxial Layers Grown by Sublimation Epitaxy
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Growth of SiC and GaN on Porous Buffer Layers
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4H-SiC Layers Grown by Liquid Phase Epitaxy on 4H-SiC Off-Axis Substrates
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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Investigation of 3C-SiC Epitaxial Layers Grown by...

Investigation of 3C-SiC Epitaxial Layers Grown by Sublimation Epitaxy

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

221-224

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.221

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Online since:

May 2000

Authors:

D.V. Davydov, Alexander A. Lebedev, Alla S. Tregubova, Vitalii V. Kozlovski, Alexey N. Kuznetsov, Elena V. Bogdanova

Keywords:

Carbon Vacancy, Deep Centers, DLTS, Proton Irradiation, Sublimation Heteropolytype Epitaxy, X-Ray Topography

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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