Growth of SiC on 6H-SiC {01-14} Substrates by Gas Source Molecular Beam Epitaxy

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Periodical:

Materials Science Forum (Volumes 338-342)

Edited by:

Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer

Pages:

201-204

DOI:

10.4028/www.scientific.net/MSF.338-342.201

Citation:

S. Nakamura et al., "Growth of SiC on 6H-SiC {01-14} Substrates by Gas Source Molecular Beam Epitaxy", Materials Science Forum, Vols. 338-342, pp. 201-204, 2000

Online since:

May 2000

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