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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Growth of SiC on 6H-SiC {01-14} Substrates by Gas...

Growth of SiC on 6H-SiC {01-14} Substrates by Gas Source Molecular Beam Epitaxy

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

201-204

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.201

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Online since:

May 2000

Authors:

Shun-ichi Nakamura, Tomoaki Hatayama, Tsunenobu Kimoto, Takashi Fuyuki, Hiroyuki Matsunami

Keywords:

{01-14} Face, GSMBE, RHEED, XTEM

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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