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HomeMaterials Science ForumMaterials Science Forum Vols. 338-3424H-SiC (11-20) Epitaxial Growth

4H-SiC (11-20) Epitaxial Growth

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

189-192

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.189

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Online since:

May 2000

Authors:

Tsunenobu Kimoto, Toshihiro Yamamoto, Zhi Yong Chen, Hiroshi Yano, Hiroyuki Matsunami

Keywords:

(11-20), Chemical Vapor Deposition (CVD), Deep Level, Homoepitaxial Growth, X-Ray Diffractometry

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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