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Supersonic Seeded Beam Assisted Growth of Epitaxial Silicon Carbide
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4H-SiC (11-20) Epitaxial Growth
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Homoepitaxial Growth of 6H SiC on Single Crystalline Spheres
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Morphological Stability of 6H-SiC Epitaxial Layer on Hemispherical Substrates Prepared by Chemical Vapor Deposition
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Growth of SiC on 6H-SiC {01-14} Substrates by Gas Source Molecular Beam Epitaxy
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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Homoepitaxial Growth of 6H SiC on Single...

Homoepitaxial Growth of 6H SiC on Single Crystalline Spheres

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

193-196

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.193

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Online since:

May 2000

Authors:

Kai Christiansen, S. Christiansen, Horst P. Strunk, Reinhard Helbig

Keywords:

Chemical Vapor Deposition (CVD), Growth Anisotropy, Non-Planar Substrate, TEM

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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