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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342High Growth Rate Epitaxy of Thick 4H-SiC Layers

High Growth Rate Epitaxy of Thick 4H-SiC Layers

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

165-168

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.165

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Online since:

May 2000

Authors:

Mikael Syväjärvi, Rositza Yakimova, Henrik Jacobsson, Margareta K. Linnarsson, Anne Henry, Erik Janzén

Keywords:

Doping, Epitaxy, Purity, Semi-insulating (SI)

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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