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Growth of 3C SiC Single Crystals from Convection Dominated Melts
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An Overview of SiC Growth
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Fast SiC Epitaxial Growth in a Chimney CVD Reactor and HTCVD Crystal Growth Developments
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Morphology Control for Growth of Thick Epitaxial 4H SiC Layers
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Vertical Hot-Wall Type CVD for SiC Growth
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LPCVD Growth and Structural Properties of 4H-SiC Epitaxial Layers
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3-D Computational Modeling of SiC Epitaxial Growth in a Hot Wall Reactor
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3-D Thermal and Flow Modeling of Hot Wall Epitaxial Chemical Vapor Deposition Reactors, Heated by Induction
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The Development of Resistive Heating for the High Temperature Growth of α-SiC using a Vertical CVD Reactor
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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Vertical Hot-Wall Type CVD for SiC Growth

Vertical Hot-Wall Type CVD for SiC Growth

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

141-144

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.141

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Online since:

May 2000

Authors:

Kunimasa Takahashi, Masao Uchida, Makoto Kitabatake, Takeshi Uenoyama

Keywords:

Epitaxial Growth, Pulse Doping, Pulse Valve, Vertical Hot-Wall Type CVD

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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