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HomeMaterials Science ForumMaterials Science Forum Vols. 338-3426H-SiC Schottky Barrier Diodes with Nearly Ideal...

6H-SiC Schottky Barrier Diodes with Nearly Ideal Breakdown Voltage

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1219-1222

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1219

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Online since:

May 2000

Authors:

Gheorghe Brezeanu, M. Badila, José Millan, Philippe Godignon, Marie Laure Locatelli, Jean-Pierre Chante, Alexander A. Lebedev, V. Banu

Keywords:

Contact Annealing, Ideal Electrical Characteristics, Oxide Ramp Profile, Schottky Diode

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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