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6H-SiC Schottky Barrier Diodes with Nearly Ideal Breakdown Voltage
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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Breakdown Voltage Improvement of 4H-SiC Schottky...

Breakdown Voltage Improvement of 4H-SiC Schottky Diodes by a Thin Surface Implant

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1211-1214

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1211

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Online since:

May 2000

Authors:

V. Khemka, K. Chatty, T. Paul Chow, Ronald J. Gutmann

Keywords:

4H-SiC, Breakdown Voltage, Leakage Current, Schottky Rectifiers

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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