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HomeMaterials Science ForumMaterials Science Forum Vols. 338-3424H-SiC Device Scaling Development on Repaired...

4H-SiC Device Scaling Development on Repaired Micropipe Substrates

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1203-1206

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1203

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Online since:

May 2000

Authors:

T.E. Schattner, Jeff B. Casady, M.C.D. Smith, Michael S. Mazzola, Vladimir Dmitriev, S.V. Rentakova, Stephen E. Saddow

Keywords:

Defect, Diode, Epitaxy, Liquid Phase Epitaxy (LPE), Micropipe, Scaling, Schottky

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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