Influence of Epitaxial Growth and Substrate Induced Defects on the Breakdown of High-voltage 4H-SiC Schottky Diodes
p.1175
p.1175
A 2.8kV, Forward Drop JBS Diode with Low Leakage
p.1179
p.1179
3.6 kV 4H-SiC JBS Diodes with Low RonS
p.1183
p.1183
Fabrication and Testing of 1,000V-60A 4H-SiC MPS Diodes in an Inductive Half-Bridge Circuit
p.1187
p.1187
Large Contact Ti/4H-SiC Schottky Diodes Fabricated Using Standard Silicon Processing Techniques
p.1191
p.1191
Optical Beam Induced Current Analysis of High-Voltage 4H-SiC Schottky Rectifiers
p.1195
p.1195
Effect of Plasma Etching and Sacrificial Oxidation on 4H-SiC Schottky Barrier Diodes
p.1199
p.1199
4H-SiC Device Scaling Development on Repaired Micropipe Substrates
p.1203
p.1203
Design and Characterization of a SiC Schottky Diode Mixer
p.1207
p.1207
Large Contact Ti/4H-SiC Schottky Diodes Fabricated Using Standard Silicon Processing Techniques
Abstract:
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Periodical:
Materials Science Forum (Volumes 338-342)
Pages:
1191-1194
Citation:
Online since:
May 2000
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© 2000 Trans Tech Publications Ltd. All Rights Reserved
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