Paper Titles

Performance and Reliability Issues of SiC-Schottky Diodes
p.1167

Designing, Physical Simulation and Fabrication of High-Voltage (3.85 kV) 4H-SiC Schottky Rectifiers Processed on Hot-Wall and Chimney CVD Films
p.1171

Influence of Epitaxial Growth and Substrate Induced Defects on the Breakdown of High-voltage 4H-SiC Schottky Diodes
p.1175

A 2.8kV, Forward Drop JBS Diode with Low Leakage
p.1179

3.6 kV 4H-SiC JBS Diodes with Low RonS
p.1183

Fabrication and Testing of 1,000V-60A 4H-SiC MPS Diodes in an Inductive Half-Bridge Circuit
p.1187

Large Contact Ti/4H-SiC Schottky Diodes Fabricated Using Standard Silicon Processing Techniques
p.1191

Optical Beam Induced Current Analysis of High-Voltage 4H-SiC Schottky Rectifiers
p.1195

Effect of Plasma Etching and Sacrificial Oxidation on 4H-SiC Schottky Barrier Diodes
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HomeMaterials Science ForumMaterials Science Forum Vols. 338-3423.6 kV 4H-SiC JBS Diodes with Low RonS

3.6 kV 4H-SiC JBS Diodes with Low RonS

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1183-1186

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1183

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Online since:

May 2000

Authors:

Yoshitaka Sugawara, Katsunori Asano, Ryuichi Saito

Keywords:

Junction Barrier Controlled Schottky Diode, pn Diodes, Schottky Diode, Static Induction

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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