Paper Titles
Preliminary Investigation of SiC on Silicon for Biomedical Applications
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SiC and GaN High-Voltage Power Switching Devices
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Electrical Impact of SiC Structural Crystal Defects on High Electric Field Devices
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Performance and Reliability Issues of SiC-Schottky Diodes
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Designing, Physical Simulation and Fabrication of High-Voltage (3.85 kV) 4H-SiC Schottky Rectifiers Processed on Hot-Wall and Chimney CVD Films
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Influence of Epitaxial Growth and Substrate Induced Defects on the Breakdown of High-voltage 4H-SiC Schottky Diodes
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A 2.8kV, Forward Drop JBS Diode with Low Leakage
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3.6 kV 4H-SiC JBS Diodes with Low RonS
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Fabrication and Testing of 1,000V-60A 4H-SiC MPS Diodes in an Inductive Half-Bridge Circuit
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Designing, Physical Simulation and Fabrication of High-Voltage (3.85 kV) 4H-SiC Schottky Rectifiers Processed on Hot-Wall and Chimney CVD Films

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1171-1174

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1171

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Online since:

May 2000

Authors:

Qamar-ul Wahab, Alexsandre Ellison, Jie Zhang, Urban Forsberg, E. Duranova, Anne Henry, Lynnette D. Madsen, Erik Janzén

Keywords:

High Power Devices, Physical Simulations, Schottky Diode

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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