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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Electrical Impact of SiC Structural Crystal...

Electrical Impact of SiC Structural Crystal Defects on High Electric Field Devices

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1161-1166

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1161

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Online since:

May 2000

Authors:

Philip G. Neudeck

Keywords:

Avalanche Breakdown, Crystal Defect, Diode, Epilayer Growth Pits, Micropipe, Microplasmas, P-N Junction, Rectifier, Reliability, Safe Operating Area, Schottky Diode, Screw Dislocations

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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