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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342SiC and GaN High-Voltage Power Switching Devices

SiC and GaN High-Voltage Power Switching Devices

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1155-1160

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1155

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Online since:

May 2000

Authors:

T. Paul Chow

Keywords:

Gallium Nitride (GaN), Silicon Carbide (SiC), Switching Devices

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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