SiC and GaN High-Voltage Power Switching Devices

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 338-342)

Edited by:

Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer

Pages:

1155-1160

DOI:

10.4028/www.scientific.net/MSF.338-342.1155

Citation:

T. P. Chow "SiC and GaN High-Voltage Power Switching Devices", Materials Science Forum, Vols. 338-342, pp. 1155-1160, 2000

Online since:

May 2000

Authors:

Export:

Price:

$35.00

In order to see related information, you need to Login.